Systematics of 4f Electron Energies Relative to Host Bands by Resonant Photoemission of Rare Earth Doped Optical Materials^*

C. W. Thiel, H. Cruguel, Y. Sun, G. J. Lapeyre, R. M. Macfarlane, R. W. Equall, and R. L. Cone

1. Title Slide

2. Importance of Crystal Band States for Optical Materials

3. Measuring the Energies of Electronic States by Photoemission

4. Measuring Binding Energies by PES

5. Resonant Photoemission for 4f Electrons

6. The 4f Photoemission Resonance

7. Extracting the 4f Component

8. The 4f Final State Structure

9. Valence Band Maximum in YAG

10. The 4f Spectra in YAG

11. Results for Rare Earth Ions in YAG

12. Binding Energy Model

13. Binding Energies in Garnets

14. Extension of the Empirical Model to Covalent Materials

15. Conclusions & Work in Progress

^*Slides from the Invited Talk Presented by C. W. Thiel at the International Conference on Dynamical Processes of Excited States in Solids, held in Lyon, France, on July 1-4, 2001