Using metallic interlayers to stabilize abrupt, epitaxial metal-metal interfaces

C. V. Ramana, P. Masse and R.J. Smith

Physics Department, Montana State University, Bozeman, MT 59717

Bum-Sik Choi

Physics Department, Jeonju University, Jeonju, 560-759, Korea

Abstract

An approach is described for stabilizing metal-metal epitaxial interfaces using a thin metallic interlayer. Rutherford backscattering and channeling techniques along with low-energy electron diffraction and keV He⁺ ion backscattering are used to demonstrate that an atomically thin layer of Ti deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, forms a thin interface alloy that prevents interdiffusion and improves epitaxial growth of Fe on Al(100). The structure is stable up to about 200 ^oC.

PACS: 68.35.Fx, 68.49.-h, 68.55.Jk, 61.18.Bn