References
1. M. W. Derstine, W. R. Babbitt, R. G. A. Craig, A. L. Lentine, F. B. McCormick, R. A. P. Tooley, and A. C. Walker, Photonics Spectra 25, issue 5, 139 (May 1991).
2. A. L. Lentine and D. A. B. Miller, IEEE J. Quantum Electronics, 29, 655-669 (1993).
3. K.V. Shenoy, C.G. Fonstad, A.C.Grot, and D. Psaltis, IEEE Phot. Tech. Lett. 7, 508 (1995).
4. H. C. Liu, J. Li, Z. R. Wasilewski, and M. Buchanan, Electronics Letters 31,. 832-3 (1995).
5. K. W. Goossen et al, IEEE Photonics Technology Letters 7, 360-2 (1995).
6. Taghizadeh-M-R. Redmond-I-R. Walker-A-C. Tooley-F-A, P. Smith-S-D.,Taylor-W. Proceedings of the SPIE 883 245 (1988).
7. J. Jurgen and B. Brumback, Opt. Comm. 76, 318 (1990).
8. Developed in collaboration with Susan A. Tonkin of the University of Washington.
9. A. C. Grot, D. Psaltis, K. V. Shenoy, and C. G. Fonstad, Jr., IEEE Photonics Technology Letters 6, 819 (1994)
8) The most up-to-date source of information is from the “OPTOCHIP Project Guide” World Wide Web home page: http://www.mit.edu:8001/afs/athena/user/i/s/isako/optochip/opto.home.html
9) K. V. Shenoy, C. G. Fonstad, Jr. and J. M. Mikkelson, “High-temperature stability of refractory-metal VLSI GaAs MESFETs,” IEEE Electron Device Letters, 15, 106-8 (1994).
10) K. V. Shenoy, C. G. Fonstad, A. C Grot-, and D. Psaltis, “Monolithic optoelectronic circuit design and fabrication by epitaxial growth on commercial VLSI GaAs MESFET's,” IEEE Photonics Technology Letters 7, 508-10 (1995).
11) E. K. Braun, K. V. Shenoy, and C. G. Fonstad, and J. M Mikkelson, “Elevated Temperature Stability of Ga As Digital Integrated Circuits”, submitted to IEEE Electron Device Letters