STRAIN, STRUCTURE AND ELECTRONIC STATES IN MBE GROWN (Nb,Ti)O2 MIXED RUTILE
S. Chambers*, Y. Gao*, S. Thevuthasan**, S. Wen**, K.L Merkle**, N.R. Shivaparan***, R.J. Smith***
*Environmental Molecular Sciences Laboratory
Pacific Northwest National Laboratory, Richland WA 99352#
** Materials Science Division
Argonne National Laboratory, Argonne, IL#
***Physics Department, Montana State University, Bozeman, MT 59717##
We have grown and characterized epitaxial Nb(x)Ti(1-x)O2 on TiO2(110) and (100) for the purpose of investigating the role of chemically-inequivalent metal atoms on the thermal and photocatalytic properties of TiO2. Our goal is to introduce, in a highly controlled fashion, a Group VA transition metal into the lattice of a Group IVA transition metal oxide without altering the crystallographic structure. So doing would alter the electronic structure in interesting and potentially useful ways by the addition of one valence electron per substituted metal atom. However, strain builds in the film as more Nb is added at a rate which depends on the crystallographic orientation of the growth direction. Films grown along (110) can accommodate Nb mole fractions as high as ~0.3 without forming misfit dislocations, whereas those grown along (100) are limited to ~10 at. % Nb. Nb-O bond lengths in Nb(x)Ti(1-x)O2 are the same as TiO bond lengths in pure TiO2 prior to the onset of dislocation formation. The extra 4d valence electron per Nb atom forms a nonbonding band which is degenerate with bonding states in the valence band region.
# Work supported by U.S. Department of Energy
##Work supported by NSF
in "Epitaxial Oxide Thin Films II", Mat. Res. Soc. Symp. Proc., 401, (1996).
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