RUTHERFORD BACKSCATTERING AND CHANNELING STUDIES OF A TiO2(100) SUBSTRATE, EPITAXIALLY GROWN PURE AND Nb-DOPED TiO2 FILMS
S. Thevuthasan*, N.R. Shivaparan**, R.J. Smith**, Y. Gao*, and S.A. Chambers*
*Environmental Molecular Sciences Laboratory
Pacific Northwest National Laboratory, Richland WA 99352#
**Physics Department, Montana State University, Bozeman, MT 59717##
We have investigated the crystalline quality of a TiO2(100) substrate, homoepitaxially grown TiO2 films and Nb-doped TiO2 fillms using Rutherford Backscattering (RBS) and channeling experiments. The minimum yields obtained from the aligned and random spectra are 2.37 +/- 0.16% for the TiO2(100) substrate, and 3.99 +/- 0.22% for a homoepitaxial TiO2 films. The minimum yields for Ti and Nb are 1.56 +/- 0.15% and 7.05 +/- 0.96%, respectively, for a Nb-doped TiO2 film. Also, about 95% of the Nb atoms occupy cation sites in the Nb-doped TiO2 film. The angular yield curves for Ti and Nb from the Nb-doped film confirm the good crystalline quality of the film in which most Nb atoms occupy the cation sites. The calculated surface peak areas for Ti and Nb using a model which incorporates Nb surface segregation from the bulk, agree very well with the corresponding surface peak areas for Ti and Nb extracted from the experiment.
# Work supported by U.S. Department of Energy
##Work supported by NSF
Applied Surface Science,to be published in (1997)
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