Growth and Structure of hcp Ti Films on Al(111) Surfaces
Y.W.Kim, G.A.White, N.R.Shivaparan, M.A.Teter, and R.J.Smith,
Department of Physics, Montana State University, Bozeman, Montana 59717*
The structure of thin Ti films grown on Al(111) surfaces at room temperature
has been studied using high energy ion scattering/channeling (HEIS), x-ray
photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), low
energy electron diffraction (LEED) and x-ray photoelectron diffraction
(XPD). Our results shows that Ti grows in the SK mode on the Al(111) surface.
Ti atoms form a 2-dimensional overlayer up to a deposition of about 2ML
Ti, followed by 3-dimensional island growth with additional Ti deposition.
The Ti islands cover the surface completely at about 12ML of Ti deposition.
XPD results shows that the Ti overlayer has a well-ordered hcp Ti(0001)
structure on the fcc Al(111) surface, in remarkable contrast to the fcc
Ti film growth observed on Al(001) and Al(110) surfaces.
*Work supported by NSF Grant No. DMR-9710092 and NASA EPSCoR Grant NCCW-0058
Accepted for publication in Surface Review and
Letters (1999)
For information on this publication or to request
a reprint send mail to smith@physics.montana.edu
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