GROWTH OF ULTRATHIN Pd FILMS ON Al(001) SURFACES
V. Shutthanandan*, Adli. A. Saleh, N. R. Shivaparan, and R. J. Smith
Physics Department,, Montana State University, Bozeman, MT 59717**
High-energy ion backscattering spectroscopy (HEIS) and x-ray photoelectron spectroscopy (XPS) were used to determine the growth mode and the interface structure of ultrathin Pd films deposited on Al(001) surfaces at room temperature. Measured Al and Pd surface peak areas for MeV He+ ions incident normal to the surface show that Pd atoms intermix with and displace Al substrate atoms. The mixing continues for Pd coverages from 0 to 5 monolayers, at which point a Pd metal film begins to grow on the alloy surface. XPS measurements of the Pd 3d photopeaks show a chemical shift that is consistent with the formation of an AlPd-like compound during the mixing phase, and Pd metal thereafter. HEIS results further reveal that the alloyed overlayer as well as the Pd metal film have some degree of axial alignment with respect to the Al substrate. The XPS intensity measurements are consistent with this two-stage growth model.
**Work supported by NSF Grant No. DMR-9409205.
Surface Science 350 11, (1996)
* Present Address:Electric Propulsion Laboratory, Department of Mechanical Engineering, Tuskegee University, Tuskegee, AL 36088, USA
For information on this publication or to request a reprint send mail to smith@physics.montana.edu
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