ROOM TEMPERATURE GROWTH OF THIN Pd FILMS ON Al(110) SURFACES
N.R.Shivaparan, V.Shutthanandan, V. Krasemann, and R.J.Smith
Physics Department, Montana State University, Bozeman, MT 59717*
High-energy ion backscattering spectroscopy (HEIS) and X-ray photoemission spectroscopy (XPS) have been used to study the growth of thin Pd layers on Al(110) surfaces at room temperature. The results are not consistent with the layered growth model presented previously for this system, but suggest instead that an Al-Pd alloy forms at the interface. Measured Al and Pd surface peak areas for MeV He+ ions incident normal to the surface show that the Pd atoms intermix with and displace Al substrate atoms. The interface mixing was observed to continue up to about 10 monolayers of Pd coverage, at which point the intermixing stops. XPS measurements of the Pd 3d photopeaks show a chemical shift that is consistent with the formation of an AlPd-like compound at the interface and the growth of Pd metal thereafter.
*Work supported by NSF
Surface Science 373, 221-229 (1997)
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