EPITAXIAL GROWTH OF FCC Ti FILMS ON Al(001) SURFACES
Adli A. Saleh, V. Shutthanandan, N.R. Shivaparan and R.J. Smith,
Department of Physics, Montana State University, Bozeman, Montana 59717*
T. T. Tran and S. A. Chambers
Environmental Molecular Sciences Laboratory, Pacific Northwest National
Laboratory,
Richland, Washington 99352**
High-energy ion scattering (HEIS), x-ray photoelectron spectroscopy
(XPS), and x-ray photoelectron diffraction (XPD) were used to study the
growth of thin Ti films on Al(001) surfaces. The Al surface peak area in
the backscattered ion spectrum of MeV He+ ions, incident along
the [00 -1] direction, was used to monitor the atomic
structure of the Ti films during growth. An initial decrease in the area
was observed indicating epitaxial film growth. This decrease continued
up to a critical film thickness of about 5.5 monolayers, after which point
the structure of the film changed. Titanium films, 3, 5, and 9 monolayers
thick, were characterized using XPD in the same chamber. Both the
HEIS and XPD results show that the Ti films grow with an fcc structure
on Al(001). A tetragonal distortion of 2.4 % in the fcc Ti film
was measured using ions incident along the [10 -1] direction. Although
there is a general similarity of fcc Ti growth on both Al(001) and
Al(110), the submonolayer growth regime does show differences for the two
surfaces.
*Work supported by NSF Grant No. DMR-9409205 and NASA EPSCoR Grant
NCCW-0058
**Work at PNL supported under Contract DE-AC06-76RLO 1830
Physical Review B56, 9841 (1997)
For information on this publication or to request
a reprint send mail to smith@physics.montana.edu
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