Composition and structure of the Co-Al interface for thin
Co films deposited on Al(001) and Al(110) surfaces at room temperature
N. R. Shivaparan, Marcus A. Teter and R. J. Smith,
Department of Physics, Montana State University, Bozeman, Montana 59717*
High-energy ion backscattering and channeling, combined with x-ray
photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED)
were used to characterize the interface thickness and composition for thin
Co films deposited on Al(001) and Al(110) surfaces at room temperature.
For the Al(001) surface, measurements of the backscattered ion yields from
Al and Co show that substrate Al atoms are continuously displaced for Co
coverages up to 3 ML, at which point Co metal begins to cover the mixed
interface. Based on XPS intensity analysis, we conclude that a CoAl-like
phase forms at the interface. A very diffuse LEED pattern with high
background was observed after a deposition of 7.6 ML of Co. For the
Al(110) surface, intermixing of Co and Al atoms was observed up to
5 ML of Co deposition, where Co metal begins to cover the interface.
No LEED pattern was observed for any Co coverage exceeding 0.2 ML
on the Al(110) surface. For both surfaces the interface thickness
is about 8-10 Å. In neither case was Co diffusion into the
Al substrate observed.
*Work supported by NSF Grant No. DMR-9409025 and 0077534, and by NASA
EPSCoR Grant NCCW-0058
Submitted for publication (2000)
For information on this publication or to request
a reprint send mail to smith@physics.montana.edu
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